IRL2203NPBF

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IRL2203NPBF

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MOSFET N-CH 30V 116A TO220AB

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Thông số kỹ thuật

thuộc tính Giá trị
Package / Case Tube
Series HEXFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 116A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 7mOhm @ 60A, 10V
Vgs(th)(Max) @ Id 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 60 nC @ 4.5 V
Vgs(Max) ±16V
Input Capacitance(Ciss)(Max) @ Vds 3290 pF @ 25 V
Power Dissipation (Max) 180W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

Tổng quan

Equivalent

Equivalent products to the IRL2203NPBF (30V, 116A N-channel MOSFET) include:
- IRL2203PBF (same specs, different packaging)
- IRL3803PBF (30V, 140A, similar characteristics)
- IRLB8743PBF (30V, 143A, lower Rds(on))
- STP80NF55-06 (55V, 80A, higher voltage rating)
- AOT240L (40V, 120A, alternative option)
Check datasheets for exact compatibility in your application.

Features

The IRL2203NPBF is an N-channel HEXFET Power MOSFET with the following key features:
- Voltage Rating: 30V (Drain-to-Source, VDS)
- Current Rating: 116A (Continuous Drain Current, ID at 25°C)
- Low On-Resistance: 4.5mΩ (RDS(on) at VGS = 10V)
- Fast Switching: Optimized for high-efficiency power applications
- Gate Drive Voltage (VGS): ±20V (max), typically driven at 10V
- Power Dissipation: 200W (at 25°C)
- Avalanche Energy Rated: Robust against inductive load spikes
- Package: TO-220AB (Through-hole, easy to mount)
- Applications: DC-DC converters, motor control, power management
This MOSFET is designed for high-current, low-loss switching in power electronics. Its low RDS(on) ensures minimal conduction losses, making it ideal for demanding applications.

Pinout

The IRL2203NPBF is a TO-220AB packaged N-channel MOSFET with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current terminal).
3. Source (S) – Ground/reference terminal.
Key Features:
- 30V Drain-Source Voltage (VDS)
- 116A Continuous Drain Current (ID)
- Low On-Resistance (RDS(on) = 4.5mΩ @ 10V VGS)
- Logic-Level Gate Drive (VGS ≥ 4.5V for full enhancement)
Commonly used in power switching, motor control, and DC-DC converters due to its high current handling and efficiency.

Application

The IRL2203NPBF, a HEXFET power MOSFET, is commonly used in:
1. Switching Power Supplies – Efficient voltage conversion.
2. Motor Control – Drives DC motors in robotics and automotive systems.
3. DC-DC Converters – Steps up/down voltage in portable electronics.
4. Load Switching – Controls high-current circuits in industrial/consumer devices.
5. Battery Management – Protects and regulates power in battery-operated systems.
Its low on-resistance and high current handling make it ideal for energy-efficient, high-power applications.

Package

The IRL2203NPBF is a HEXFET Power MOSFET from Infineon Technologies. It comes in a TO-220AB package, which is a through-hole, three-lead (gate, drain, source) design with a metal tab for heat dissipation. This package is widely used for power applications due to its robustness and ease of mounting on heatsinks.

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