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IRLML0100TRPBF
+BOMMOSFET N-CH 100V 1.6A SOT23
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRLML0100TRPBF
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Bảng dữ liệu IRLML0100TRPBF DataSheet
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Gói SOT23
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Có sẵn2453
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 1.6A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 220mOhm @ 1.6A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 25µA |
| GateCharge(Qg)(Max)@Vgs | 2.5 nC @ 4.5 V |
| Vgs(Max) | ±16V |
| InputCapacitance(Ciss)(Max)@Vds | 290 pF @ 25 V |
| PowerDissipation(Max) | 1.3W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | Micro3™/SOT-23 |
Tổng quan
Description
This MOSFET is designed for low-voltage applications and is often found in portable devices, battery-powered equipment, and DC-DC converters. It is housed in a compact, surface-mount package, making it suitable for use in space-constrained designs. The IRLML0100TRPBF is favored for its ability to handle significant currents while maintaining a low thermal footprint.
Overall, the IRLML0100TRPBF offers a reliable solution for designers looking to implement efficient power control with minimal energy loss, making it an integral component in modern electronic systems.
Equivalent
1. NXP BSH103: Similar specifications in a small package.
2. ON Semiconductor NTR4101PT1G: Offers similar performance metrics.
3. Diodes Incorporated DMN10H700SFG: Comparable voltage and current ratings.
4. STMicroelectronics STL10N3LLH6: Another alternative with similar characteristics.
Always verify specific parameters and compatibility with your application before selecting an equivalent.
Features
1. Type: N-channel MOSFET.
2. Voltage and Current Ratings: It typically operates at a drain-source voltage (V_DS) of 20V and can handle continuous drain current (I_D) up to 10A.
3. Low On-Resistance: The MOSFET features a low on-resistance (R_DS(on)), which reduces power loss and improves efficiency.
4. Package: Available in a compact SOT-23 package, suitable for space-constrained applications.
5. Fast Switching: It offers fast switching capabilities, making it suitable for high-speed applications.
6. Thermal Management: Designed for efficient thermal performance, helping to manage heat dissipation.
7. Applications: Common applications include DC-DC converters, load switches, motor drives, and other power management solutions.
These features make the IRLML0100TRPBF a versatile component in various electronic circuits requiring efficient power handling and switching.
Pinout
1. Gate (G): This is the control terminal used to switch the MOSFET on and off.
2. Source (S): This is the terminal where the charge carriers enter the MOSFET.
3. Drain (D): This is the terminal where the charge carriers exit the MOSFET.
The specific function of the IRLML0100TRPBF is as a logic level N-channel MOSFET, meaning it can be turned on with a low voltage from a microcontroller or other logic-level device. It is mainly used in low-power applications for switching and amplification.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and voltage regulators for improving efficiency and reducing power loss.
2. Load Switching: Ideal for controlling loads in battery-powered devices due to its low on-resistance.
3. Consumer Electronics: Employed in devices like smartphones and tablets for efficient power usage.
4. Automotive: Utilized in electronic control units for managing various vehicle functions.
5. Telecommunications: Assists in signal processing and power regulation tasks.
Its small footprint and high efficiency make it suitable for space-constrained applications requiring reliable performance.