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IRLML5203
+BOMMOSFET P-CH 30V 3A MICRO3/SOT23
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRLML5203
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Bảng dữ liệu IRLML5203 DataSheet
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Gói SOT-23
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Có sẵn6689
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Obsolete |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 3A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 98mOhm @ 3A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 14 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 510 pF @ 25 V |
| PowerDissipation(Max) | 1.25W (Ta) |
| MountingType | Surface Mount |
| SupplierDevicePackage | Micro3™/SOT-23 |
Tổng quan
Description
- Voltage Rating: -30V (VDSS).
- Current Rating: -4.3A (ID).
- Low On-Resistance: 52mΩ (max at VGS = -10V).
- Gate Threshold: -1V (typical), enabling logic-level drive.
- Compact Package: SOT-23 (space-saving).
Ideal for battery-powered devices, load switches, and power management due to its low power loss and fast switching. Suitable for 3.3V/5V systems and often used in portable electronics, DC-DC converters, and motor control.
For detailed specs, refer to the datasheet.
Equivalent
- SI2301DS (Vishay)
- DMG2305UX (Diodes Inc.)
- AO3401 (Alpha & Omega)
- BSS84 (NXP/Infineon)
- NDS356AP (ON Semiconductor)
These are similar in specs (P-channel, SOT-23, ~12V, 2-4A). Verify exact parameters (Rds(on), Vgs) for your application.
Features
- Voltage Rating: -30V (Drain-to-Source, VDS)
- Current Rating: -4.3A (Continuous Drain Current, ID)
- Low On-Resistance: 52mΩ (at VGS = -10V)
- Gate Threshold Voltage (VGS(th)): -1V to -2V
- Fast Switching: Low gate charge (Qg ~ 8nC)
- Low Power Loss: Optimized for efficiency
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, battery protection
It’s designed for low-voltage, high-efficiency circuits, ideal for portable and space-constrained designs.
Pinout
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the power supply (typically positive for P-channel).
3. Drain (D) – Connects to the load.
Key Features:
- Voltage Rating: -30V (Drain-to-Source, VDS).
- Current Rating: -4.3A (continuous drain current).
- Low Threshold Voltage (VGS(th)): -1V (enhancement-mode).
- Low On-Resistance (RDS(on)): ~50mΩ (at VGS = -4.5V).
Common Uses:
- Low-voltage power switching.
- Load control in portable devices.
- Battery protection circuits.
Compact and efficient for space-constrained designs.
Application
1. Power Management – Switching and load control in portable devices.
2. Battery Protection – Reverse polarity and discharge prevention.
3. DC-DC Converters – Efficient voltage regulation.
4. Motor Control – Small motor drivers in robotics and appliances.
5. Signal Switching – Low-power analog/digital signal routing.
Its low threshold voltage and compact SOT-23 package make it ideal for space-constrained, low-voltage (<12V) applications.