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SI7288DP-T1-GE3
+BOMMOSFET 2N-CH 40V 20A PPAK SO-8
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #SI7288DP-T1-GE3
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Bảng dữ liệu SI7288DP-T1-GE3 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain(Id) @ 25°C | 20A |
| Rds On(Max) @ Id Vgs | 19mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2.8V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 565pF @ 20V |
| Power - Max | 15.6W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Tổng quan
Description
The SI7288DP-T1-GE3 is a power MOSFET designed by Vishay Siliconix, commonly used in electronic circuits for switching applications. This component is part of the TrenchFET series, which is known for offering low on-resistance and high efficiency. It features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) capacity of around 20A, making it suitable for moderate power applications.
The SI7288DP-T1-GE3 is housed in a PowerPAK SO-8 package, which provides an excellent balance between thermal performance and compact size, making it ideal for densely packed circuit boards. The MOSFET's low gate charge and fast switching capabilities contribute to its overall efficiency, especially in high-frequency applications.
This component is typically utilized in power management systems, DC-DC converters, motor drives, and load switches. Its reliability and performance make it a popular choice for designers looking to optimize power efficiency and thermal management in their electronic products.
The SI7288DP-T1-GE3 is housed in a PowerPAK SO-8 package, which provides an excellent balance between thermal performance and compact size, making it ideal for densely packed circuit boards. The MOSFET's low gate charge and fast switching capabilities contribute to its overall efficiency, especially in high-frequency applications.
This component is typically utilized in power management systems, DC-DC converters, motor drives, and load switches. Its reliability and performance make it a popular choice for designers looking to optimize power efficiency and thermal management in their electronic products.
Equivalent
The SI7288DP-T1-GE3 is a N-channel MOSFET produced by Vishay. For equivalent products, look for components with similar specifications: N-channel MOSFET, 30V drain-to-source voltage, and comparable current and power ratings. Possible equivalents include:
1. IRF530N by Infineon
2. FDP7030BL by ON Semiconductor
3. NTMFS4935N by ON Semiconductor
Ensure to verify the datasheets for exact match in specifications and package compatibility.
1. IRF530N by Infineon
2. FDP7030BL by ON Semiconductor
3. NTMFS4935N by ON Semiconductor
Ensure to verify the datasheets for exact match in specifications and package compatibility.
Features
The SI7288DP-T1-GE3 is a power MOSFET designed by Vishay Siliconix. It is characterized by several key features:
1. N-Channel MOSFET: This device is an N-channel MOSFET, which is commonly used for switching applications.
2. Low On-Resistance: The SI7288DP offers low on-resistance, enhancing efficiency by minimizing power loss during operation.
3. Package: It comes in a PowerPAK SO-8 package, which provides excellent thermal performance and space efficiency.
4. Voltage and Current Ratings: It is suitable for applications with moderate voltage and current requirements.
5. Fast Switching: The MOSFET is designed for fast switching speeds, making it ideal for high-frequency applications.
6. Thermal Performance: The device supports good thermal management, which is essential for maintaining reliability under various operating conditions.
7. Applications: Commonly used in power management, DC-DC converters, load switches, and motor control applications.
These features make the SI7288DP-T1-GE3 a versatile choice for designers looking to optimize performance in power-sensitive applications.
1. N-Channel MOSFET: This device is an N-channel MOSFET, which is commonly used for switching applications.
2. Low On-Resistance: The SI7288DP offers low on-resistance, enhancing efficiency by minimizing power loss during operation.
3. Package: It comes in a PowerPAK SO-8 package, which provides excellent thermal performance and space efficiency.
4. Voltage and Current Ratings: It is suitable for applications with moderate voltage and current requirements.
5. Fast Switching: The MOSFET is designed for fast switching speeds, making it ideal for high-frequency applications.
6. Thermal Performance: The device supports good thermal management, which is essential for maintaining reliability under various operating conditions.
7. Applications: Commonly used in power management, DC-DC converters, load switches, and motor control applications.
These features make the SI7288DP-T1-GE3 a versatile choice for designers looking to optimize performance in power-sensitive applications.
Pinout
The SI7288DP-T1-GE3 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) developed by Vishay Siliconix. It features an N-channel MOSFET design and typically comes in a PowerPAK SO-8 package. The pin count for this package is 8 pins.
The primary function of the SI7288DP-T1-GE3 is to serve as a switch or relay in electronic circuits, controlling the flow of electricity. It is commonly used in applications requiring high efficiency and low on-resistance, such as in power management, motor control, and switching regulators.
The specific pin configuration for the PowerPAK SO-8 usually includes:
- Pins 1, 2, 3: Source
- Pin 4: Gate
- Pins 5, 6, 7, 8: Drain
This pin arrangement allows for optimal thermal performance and efficient current flow, making it suitable for high-current applications. Always refer to the manufacturer's datasheet for the most accurate and detailed information regarding pin configuration and electrical characteristics.
The primary function of the SI7288DP-T1-GE3 is to serve as a switch or relay in electronic circuits, controlling the flow of electricity. It is commonly used in applications requiring high efficiency and low on-resistance, such as in power management, motor control, and switching regulators.
The specific pin configuration for the PowerPAK SO-8 usually includes:
- Pins 1, 2, 3: Source
- Pin 4: Gate
- Pins 5, 6, 7, 8: Drain
This pin arrangement allows for optimal thermal performance and efficient current flow, making it suitable for high-current applications. Always refer to the manufacturer's datasheet for the most accurate and detailed information regarding pin configuration and electrical characteristics.
Manufacturer
The SI7288DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of products including diodes, MOSFETs, optoelectronics, resistors, inductors, and capacitors. Vishay's components are used in various applications across multiple industries, including automotive, industrial, computing, consumer electronics, telecommunications, and medical sectors. As a significant player in the electronics industry, Vishay is known for its innovation and the reliability of its components, making it a key supplier to many technology-driven markets around the world.
Application
The SI7288DP-T1-GE3 is a power MOSFET commonly used in various applications due to its efficient switching capabilities and low on-resistance. Typical application areas include power management systems, DC-DC converters, load switching, and motor control. It is also used in battery-powered devices, computing applications, and telecommunications equipment to enhance power efficiency and reliability. Its compact size and thermal performance make it suitable for high-density applications where space and heat dissipation are critical factors.
Package
The SI7288DP-T1-GE3 is a power MOSFET from Vishay, packaged in a PowerPAK SO-8 format. This package type provides efficient thermal performance and a compact size, suitable for high-density applications.
