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SI7949DP-T1-E3
+BOMMOSFET 2P-CH 60V 3.2A PPAK SO-8
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #SI7949DP-T1-E3
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Bảng dữ liệu SI7949DP-T1-E3 DataSheet
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Gói PowerPAK-SO-8
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Có sẵn5356
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 3.2A |
| RdsOn(Max)@IdVgs | 64mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 40nC @ 10V |
| Power-Max | 1.5W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | PowerPAK® SO-8 Dual |
Tổng quan
Description
The SI7949DP-T1-E3 is a specific model of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Vishay Siliconix. It is designed for use in power management applications due to its efficient energy conduction and switching capabilities. This component typically features low on-resistance, which minimizes power loss and enhances efficiency. It is often packaged in a PowerPAK SO-8, ensuring compactness while providing robust thermal performance.
Key applications for the SI7949DP-T1-E3 include DC-DC converters, load switching, and other power management systems where space and power efficiency are critical. It is designed to handle significant current levels and voltage, making it suitable for both consumer electronics and industrial applications.
This MOSFET is also RoHS compliant, ensuring it meets environmental standards for hazardous substances. Its specifications make it a versatile choice for engineers seeking reliable performance in demanding applications. Always refer to the manufacturer's datasheet for detailed electrical characteristics, thermal data, and application guidelines.
Key applications for the SI7949DP-T1-E3 include DC-DC converters, load switching, and other power management systems where space and power efficiency are critical. It is designed to handle significant current levels and voltage, making it suitable for both consumer electronics and industrial applications.
This MOSFET is also RoHS compliant, ensuring it meets environmental standards for hazardous substances. Its specifications make it a versatile choice for engineers seeking reliable performance in demanding applications. Always refer to the manufacturer's datasheet for detailed electrical characteristics, thermal data, and application guidelines.
Equivalent
The SI7949DP-T1-E3 is a MOSFET from Vishay. Equivalent products from other manufacturers that may have similar specifications include:
1. NXP PMPB60XN - A MOSFET with comparable voltage and current ratings.
2. Infineon BSC050N03LS - Offers similar features and performance metrics.
3. ON Semiconductor NTD65N03R - Another MOSFET with analogous specifications.
4. STMicroelectronics STS50NH3LL - Matches in terms of functionality and ratings.
When selecting an equivalent, always compare the datasheets to ensure compatibility with your specific application requirements.
1. NXP PMPB60XN - A MOSFET with comparable voltage and current ratings.
2. Infineon BSC050N03LS - Offers similar features and performance metrics.
3. ON Semiconductor NTD65N03R - Another MOSFET with analogous specifications.
4. STMicroelectronics STS50NH3LL - Matches in terms of functionality and ratings.
When selecting an equivalent, always compare the datasheets to ensure compatibility with your specific application requirements.
Features
The SI7949DP-T1-E3 is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management and switching applications. Some key features include:
1. N-Channel MOSFET: This component is an N-channel MOSFET, which is typically used for high-speed switching and amplification.
2. Low On-Resistance: It features a low on-resistance, which minimizes power loss and enhances efficiency.
3. Package Type: It usually comes in a compact, surface-mount package, making it suitable for space-constrained applications.
4. Robust Performance: The design ensures reliable performance in various environmental conditions, which is crucial for industrial and consumer electronics.
5. Thermal Performance: Good thermal characteristics allow it to handle higher power levels effectively.
6. Applications: Commonly used in DC-DC converters, power management systems, and other high-frequency applications.
This MOSFET is valued for its durability, efficiency, and compact size, making it versatile for numerous electronic applications.
1. N-Channel MOSFET: This component is an N-channel MOSFET, which is typically used for high-speed switching and amplification.
2. Low On-Resistance: It features a low on-resistance, which minimizes power loss and enhances efficiency.
3. Package Type: It usually comes in a compact, surface-mount package, making it suitable for space-constrained applications.
4. Robust Performance: The design ensures reliable performance in various environmental conditions, which is crucial for industrial and consumer electronics.
5. Thermal Performance: Good thermal characteristics allow it to handle higher power levels effectively.
6. Applications: Commonly used in DC-DC converters, power management systems, and other high-frequency applications.
This MOSFET is valued for its durability, efficiency, and compact size, making it versatile for numerous electronic applications.
Pinout
The SI7949DP-T1-E3 is a power MOSFET manufactured by Vishay Siliconix. It is designed for applications requiring a high-efficiency switch. The MOSFET is housed in a PowerPAK SO-8 package, which features enhanced thermal performance and a compact footprint.
The SI7949DP-T1-E3 has an 8-pin configuration, although some pins are internally connected as common points:
1. D1, D2, D3, D4 (Pins 1, 2, 3, 4): Drain
2. G (Pin 5): Gate
3. S (Pin 6): Source
4. S (Pin 7): Source (internally connected to Pin 6)
5. S (Pin 8): Source (internally connected to Pins 6 and 7)
The primary function of this MOSFET is as a switch or amplifier in electronic circuits. It features low on-resistance and is suitable for applications like DC-DC converters, load switches, and power management. Its design supports efficient thermal management, allowing for use in high-performance applications.
The SI7949DP-T1-E3 has an 8-pin configuration, although some pins are internally connected as common points:
1. D1, D2, D3, D4 (Pins 1, 2, 3, 4): Drain
2. G (Pin 5): Gate
3. S (Pin 6): Source
4. S (Pin 7): Source (internally connected to Pin 6)
5. S (Pin 8): Source (internally connected to Pins 6 and 7)
The primary function of this MOSFET is as a switch or amplifier in electronic circuits. It features low on-resistance and is suitable for applications like DC-DC converters, load switches, and power management. Its design supports efficient thermal management, allowing for use in high-performance applications.
Manufacturer
The SI7949DP-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the production of discrete semiconductors and passive electronic components. These products are commonly used in various applications, including automotive, industrial, consumer electronics, telecommunications, and computing. Vishay is known for its wide range of products, such as diodes, MOSFETs, resistors, capacitors, and inductors. The company plays a significant role in the electronics industry by providing essential components that enable the functioning of electronic circuits and systems.
Application
The SI7949DP-T1-E3 is a MOSFET component used in various electronic applications. Its primary applications include power management circuits, DC-DC converters, load switching, and motor control systems. It is often utilized in consumer electronics, telecommunications equipment, industrial automation, and automotive electronics. Its ability to handle high current and fast switching speeds makes it suitable for enhancing efficiency in battery management systems and energy-efficient power supplies.
Package
The SI7949DP-T1-E3 is a MOSFET transistor packaged in a PowerPAK SO-8. This package type is designed for enhanced thermal performance and compact size, ideal for high-efficiency applications.
