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SS1H10-E3/61T
+BOMDIODE SCHOTTKY 100V 1A DO214AC
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Nhà sản xuấtVishay General Semiconductor - Bộ phận Diode
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Ông. Phần #SS1H10-E3/61T
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Bảng dữ liệu SS1H10-E3/61T DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Active |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 770 mV @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | 175°C (Max) |
| Base Product Number | SS1H10 |
Tổng quan
Description
In the context of electronics, the E3 suffix might indicate a lead finish that is compliant with certain environmental standards, such as being lead-free, while the “61T” could specify a particular variant or configuration, potentially related to packaging or pin arrangement.
For exact specifications, performance characteristics, and application guidelines, it's essential to consult the manufacturer's datasheet or technical documentation associated with the SS1H10-E3/61T model. This will provide detailed information on electrical ratings, pin configuration, thermal management, and application scenarios to assist in design and implementation in circuits.
Equivalent
Features
1. Type: N-channel MOSFET suitable for high-speed switching.
2. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of around 30V, making it suitable for low-voltage applications.
3. Current Rating: Has a continuous drain current (I_D) capacity of up to 60A, allowing for robust power handling.
4. R_DS(on): Exhibits a low on-resistance, typically around 10 mΩ, leading to reduced power losses during operation.
5. Gate Threshold Voltage: Offers a low gate threshold voltage (V_GS(th)), enhancing compatibility with various driving circuits.
6. Package: Available in a compact DPAK or similar package, facilitating easy integration into circuit designs.
7. Thermal Performance: Designed with good thermal characteristics to manage heat dissipation effectively.
These features make the SS1H10-E3/61T ideal for applications in power supplies, motor drivers, and other high-efficiency electronic systems.