Hình ảnh chỉ để tham khảo
TPN6R303NC
+BOMMOSFETs
-
Nhà sản xuấtToshiba
-
Ông. Phần #TPN6R303NC
-
Có sẵn29608
365 Đảm bảo chất lượng ngày
7*24 giờ dịch vụ quarantee
90-Bảo hành sau bán hàng ngày
Bảo hành sản phẩm chính xác
Thông số kỹ thuật
| thuộc tính | Giá trị |
Tổng quan
Description
Key features of the TPN6R303NC typically include low on-resistance, which minimizes power loss and enhances efficiency, as well as a relatively high maximum drain current capability. It may also offer fast switching speeds, contributing to better performance in high-frequency applications. Additionally, the package type and thermal characteristics are designed to support reliable operation under different environments. In summary, the TPN6R303NC serves as a versatile component in modern electronic design, providing a balance of performance and reliability.
Equivalent
1. NXP PSMN6R4-30YL
2. Infineon BSC067N06NS3G
3. STMicroelectronics STL6N3LLH6
Please verify the specific requirements and characteristics, like RDS(on), gate charge, and thermal performance, to ensure compatibility for your application.
Features
1. Voltage and Current Ratings: It typically operates with a drain-source voltage (V_DS) and a continuous drain current (I_D) suitable for medium-power applications.
2. Low On-Resistance: It features low on-resistance, which enhances efficiency by reducing power loss during operation.
3. Fast Switching Speed: This MOSFET is designed for quick switching, making it suitable for high-frequency circuits.
4. Compact Package: Often available in a compact package that is ideal for space-constrained applications.
5. Thermal Performance: It provides effective thermal management, allowing for stable operation under varying thermal conditions.
6. Applications: Commonly used in power management, motor control, DC-DC converters, and other applications requiring efficient switching.
Always refer to the specific datasheet for detailed specifications and characteristics to ensure it meets the requirements of your particular application.
Pinout
1. Gate (G): This is the control terminal for the MOSFET. Applying a voltage to the gate controls the current flow between the drain and source.
2. Drain (D): This terminal is typically connected to the higher voltage. It's where the current flows out of the MOSFET when it's conducting.
3. Source (S): This terminal is usually connected to the lower voltage side or ground. Current flows into the MOSFET through the source.
The TPN6R303NC is used for switching and amplification in electronic circuits, benefiting from its N-channel construction, which generally offers faster operation and lower on-resistance compared to P-channel MOSFETs.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and switching regulators.
2. Motor Drives: Suitable for controlling small motors and actuators.
3. LED Drivers: Employed in LED lighting systems for efficient power control.
4. Battery Management Systems: Helps in managing charging and discharging cycles.
5. Consumer Electronics: Utilized in devices like laptops, smartphones, and tablets for power regulation.
6. Telecommunications: Used in network equipment for efficient power distribution.
These applications leverage the MOSFET's ability to handle high power with low heat generation.