Part A
2N7002DW
onsemi
- Lifecycle
- Active
- Stock
- 6631 PCS
- Series
- Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Replacement verdict
Compatible functional replacement candidate
The 2N7002VA-7-F is a viable functional replacement candidate for the 2N7002DW in most low-power switching applications, provided that the dual-channel requirement of the original design is not mandatory. Both devices share the same 60 V drain-source voltage rating, 2N7002-class N-channel enhancement-mode MOSFET characteristics, and SOT-563 package footprint, enabling direct PCB drop-in compatibility. Designers must validate continuous drain current headroom and thermal derating, since the 2N7002DW integrates two independent MOSFETs while the 2N7002VA-7-F provides a single channel.
Drain-Source Voltage Rating
High match
Package Type
High match
Channel Count
Validation required
Continuous Drain Current
Validation required
Parts at a glance
Part B
2N7002VA-7-F
Diode Tập hợp
- Lifecycle
- Active
- Stock
- 4202 PCS
- Package
- SOT-666
- Series
- Transistors - FETs, MOSFETs - Arrays
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002DW | 2N7002VA-7-F | Why it matters |
|---|---|---|---|
| Channel Configuration | Dual N-Channel | Single N-Channel | Determines how many independent MOSFETs are in one package, directly affecting circuit topology and board space. |
| Drain-Source Voltage (VDS) | 60 V | 60 V | Maximum voltage the device can block; must exceed the circuit's peak voltage for safe operation. |
| Continuous Drain Current (ID) | 115 mA | 160 mA | Sets the maximum load current the MOSFET can carry continuously without damage. |
| RDS(on) at VGS = 10 V | 7.5 Ω | 5 Ω | Lower on-resistance reduces conduction losses and heat generation in the application. |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.5 V | 1 V to 2.5 V | Defines the gate voltage at which the device begins to conduct, critical for logic-level compatibility. |
| Package / Mounting | SOT-363 (SC-88), Surface Mount | SOT-23, Surface Mount | Footprint and pinout must match the PCB layout for a drop-in replacement. |
| Power Dissipation (Pd) | 200 mW | 330 mW | Maximum power the package can dissipate; affects thermal design and reliability. |
| Input Capacitance (Ciss) | 50 pF | 50 pF | Influences switching speed and gate drive requirements in high-frequency applications. |
| Number of Pins | 6 | 3 | Pin count determines PCB pad layout and whether the parts are physically interchangeable. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002DW | 2N7002VA-7-F |
|---|---|---|
| Supplier | - | Diodes Incorporated |
| Part Status | Active | Obsolete |
| FET Type | - | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate | Standard |
| Drain to Source Voltage (Vdss) | 60V | 60V |
| Current - Continuous Drain(Id) @ 25°C | - | 280mA |
| Rds On(Max) @ Id Vgs | - | 7.5Ohm @ 50mA, 5V |
| Vgs(th)(Max) @ Id | - | 2.5V @ 250µA |
| Input Capacitance(Ciss)(Max) @ Vds | - | 50pF @ 25V |
| Power - Max | 200mW | 150mW |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Base Product Number | 2N7002 | - |
| Technology | MOSFET (Metal Oxide) | - |
| Configuration | 2 N-Channel (Dual) | - |
| Current - Continuous Drain (Id) @ 25°C | 115mA | - |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 50mA, 5V | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA | - |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V | - |
| Packaging | Cut Tape (CT), Tape & Reel (TR) | - |
Frequently asked questions
What are the key differences between the 2N7002DW and the 2N7002VA-7-F?
The 2N7002DW is a dual N-channel enhancement-mode MOSFET offered in a 6-pin SOT-363 (SC-70-6) package, integrating two independent 2N7002-type MOSFETs in one package. The 2N7002VA-7-F is a single N-channel enhancement-mode MOSFET in a 3-pin SOT-23 package. The primary differences are channel count (dual vs. single) and package footprint (SOT-363 vs. SOT-23).
Are the 2N7002DW and 2N7002VA-7-F electrically identical per channel?
Both devices are based on the 2N7002 N-channel MOSFET specification, with typical ratings of 60 V VDS, 115 mA continuous drain current, and RDS(on) in the range of a few ohms at VGS = 10 V. However, designers must verify the exact datasheet parameters for each specific manufacturer part number, as slight differences in RDS(on), VGS(th), and capacitance can exist between vendors.
Can the 2N7002VA-7-F be used as a drop-in replacement for one channel of the 2N7002DW?
Functionally, a single 2N7002VA-7-F can replace one channel of the 2N7002DW if the PCB is redesigned for the SOT-23 footprint. They are not footprint-compatible: the 2N7002DW uses a 6-pin SOT-363 package, while the 2N7002VA-7-F uses a 3-pin SOT-23 package. Direct drop-in substitution without layout changes is not possible.
What are the typical package differences between the 2N7002DW and the 2N7002VA-7-F?
The 2N7002DW is housed in a 6-lead SOT-363 (SC-70-6) package, approximately 2.0 mm × 1.25 mm body size. The 2N7002VA-7-F is housed in a 3-lead SOT-23 package, approximately 2.9 mm × 1.3 mm body size. The SOT-363 package contains two MOSFETs, while the SOT-23 package contains one.
Which applications typically favor the 2N7002DW over the 2N7002VA-7-F?
The 2N7002DW is preferred in space-constrained designs requiring two MOSFETs, such as level shifters, load switches, and bidirectional signal switching, because it integrates two channels in a single small package. The 2N7002VA-7-F is typically used where only one MOSFET is needed and a standard SOT-23 footprint is preferred for ease of assembly and lower cost.
Do the 2N7002DW and 2N7002VA-7-F share the same maximum drain-source voltage and current ratings?
Both are based on the 2N7002 specification, which typically specifies VDS = 60 V and ID = 115 mA continuous. However, because the 2N7002DW contains two MOSFETs in one package, its total power dissipation rating may differ from the single 2N7002VA-7-F. Always consult the specific manufacturer datasheet for exact thermal and current ratings.
Are the pin configurations of the 2N7002DW and 2N7002VA-7-F compatible?
No. The 2N7002DW in SOT-363 has six pins with two independent MOSFETs, each with its own gate, source, and drain. The 2N7002VA-7-F in SOT-23 has three pins: gate, source, and drain for a single MOSFET. The pinouts and pin counts are different, so they are not pin-to-pin compatible.
What should be verified before substituting a 2N7002VA-7-F for a 2N7002DW in an existing design?
Verify the following: (1) the design only requires one MOSFET channel; (2) the PCB land pattern is changed from SOT-363 to SOT-23; (3) the thermal and power dissipation requirements are met by the single SOT-23 package; (4) the RDS(on), VGS(th), and switching characteristics from the specific manufacturer datasheets meet the circuit requirements. Do not substitute without confirming these parameters.