Part A
2N7002,215
Nexperia Hoa Kỳ Inc.
- Lifecycle
- Active
- Stock
- 6582 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Replacement verdict
Compatible functional replacement candidate
The 2N7002ET1G and 2N7002,215 are functionally equivalent N-channel enhancement-mode MOSFETs with matching voltage, current, and package ratings, making them suitable drop-in replacements for most low-power switching and level-shifting applications. Designers should verify gate threshold and RDS(on) tolerances against their specific circuit requirements before finalizing the substitution.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
Static Drain-Source On-Resistance
Validation required
Parts at a glance
Part B
2N7002ET1G
onsemi
- Lifecycle
- Active
- Stock
- 4059 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
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Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002,215 | 2N7002ET1G |
|---|---|---|
| Series | TrenchMOS™ | - |
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | 260mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 5Ohm @ 500mA, 10V | 2.5Ohm @ 240mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Vgs(Max) | ±30V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 10 V | 26.7 pF @ 25 V |
| Power Dissipation (Max) | 830mW (Ta) | 300mW (Tj) |
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Charge(Qg)(Max) @ Vgs | - | 0.81 nC @ 5 V |