Part A
2N7002K-7
Diode Tập hợp
- Lifecycle
- Active
- Stock
- 5630 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Replacement verdict
Compatible functional replacement candidate
The 2N7002ET1G and 2N7002K-7 are both N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable voltage and current ratings, making them viable functional substitutes in most low-power switching applications. However, designers should verify gate threshold voltage tolerances and RDS(on) characteristics against specific circuit requirements before committing to a drop-in replacement.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
Gate Threshold Voltage
Validation required
Parts at a glance
Part B
2N7002ET1G
onsemi
- Lifecycle
- Active
- Stock
- 4059 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002K-7 | 2N7002ET1G |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 380mA (Ta) | 260mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 2Ohm @ 500mA, 10V | 2.5Ohm @ 240mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 1mA | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.3 nC @ 4.5 V | 0.81 nC @ 5 V |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 25 V | 26.7 pF @ 25 V |
| Power Dissipation (Max) | 370mW (Ta) | 300mW (Tj) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |