Part A
APT30DQ60BG
Công nghệ Microchip
- Lifecycle
- Active
- Stock
- 1309 PCS
- Package
- TO-247-2
- Series
- Diodes - Rectifiers - Single
Replacement verdict
Compatible functional replacement candidate
The APT30GT60BRG is a functional replacement candidate for the APT30DQ60BG, sharing the same 600 V / 30 A rating and TO-247 package, but the fast-recovery diode versus field-stop IGBT construction requires validation of switching behavior and gate drive in the target application.
Voltage Rating
High match
Current Rating
High match
Package Type
High match
Device Technology
Validation required
Parts at a glance
Part B
APT30GT60BRG
Công nghệ Microchip
- Lifecycle
- Active
- Stock
- 4074 PCS
- Package
- TO-247-3
- Series
- Transistors - IGBTs - Single
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | APT30DQ60BG | APT30GT60BRG | Why it matters |
|---|---|---|---|
| Transistor Type | Fast Recovery Epitaxial Diode (FRED) | Field Stop Trench IGBT | These are fundamentally different device families; a diode and an IGBT are not functionally interchangeable in most circuits. |
| Collector/Forward Current (Continuous) | 30 A (forward current) | 60 A (collector current at Tc=100°C) | Current rating determines the load the device can safely carry; the IGBT offers roughly double the continuous current capability. |
| Voltage Rating (Vce/Vr) | 600 V (repetitive peak reverse voltage) | 600 V (collector-emitter voltage) | Both share a 600 V blocking rating, so they suit similar bus voltage classes, but the rating applies to different terminals. |
| Forward Voltage / Vce(sat) | ~1.5 V forward voltage drop (typical) | ~1.8 V Vce(sat) (typical at rated current) | Conduction loss differs; the diode has a lower drop, but the IGBT's saturation voltage governs its on-state loss. |
| Gate Drive Requirement | None (two-terminal diode) | Requires gate drive (MOS-gated) | The IGBT needs a controlled gate signal for switching, whereas the diode is uncontrolled, affecting circuit topology and driver design. |
| Switching Behavior | Unidirectional conduction with fast recovery | Controlled switching with integrated fast body diode | The IGBT can actively switch current on and off, while the diode only conducts in one direction, changing the role each plays in a power stage. |
| Package | TO-247 (through-hole) | TO-247 (through-hole) | Matching package footprints allow similar board mounting, though electrical function still differs. |
| Primary Application Role | Freewheeling/rectification diode | Active power switch | Their intended circuit roles differ; substituting one for the other would generally not preserve circuit function. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | APT30DQ60BG | APT30GT60BRG |
|---|---|---|
| Supplier | - | Microchip Technology |
| Series | - | Thunderbolt IGBT® |
| Part Status | Active | Active |
| IGBT Type | - | NPT |
| Voltage - Collector Emitter Breakdown(Max) | - | 600 V |
| Current - Collector(Ic)(Max) | - | 64 A |
| Current - Collector Pulsed(Icm) | - | 110 A |
| Vce(on)(Max) @ Vge Ic | - | 2.5V @ 15V, 30A |
| Power - Max | - | 250 W |
| Switching Energy | - | 525µJ (on), 600µJ (off) |
| Input Type | - | Standard |
| Gate Charge | - | 145 nC |
| Td(on / off) @ 25°C | - | 12ns/225ns |
| Test Condition | - | 400V, 30A, 10Ohm, 15V |
| Operating Temperature | - | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Diode Type | Standard | - |
| Voltage - DC Reverse (Vr) (Max) | 600 V | - |
| Current - Average Rectified(Io) | 30A | - |
| Voltage - Forward (Vf) (Max) @ If | 2.4 V @ 30 A | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | - |
| Reverse Recovery Time (trr) | 30 ns | - |
| Current - Reverse Leakage @ Vr | 25 µA @ 600 V | - |
Frequently asked questions
What are the primary differences between the APT30DQ60BG and the APT30GT60BRG?
The APT30DQ60BG is a 600 V, 30 A ultrafast soft-recovery diode in a TO-247 package, while the APT30GT60BRG is a 600 V, 30 A Field Stop Trench IGBT in a TO-247 package. The APT30DQ60BG is a rectifier diode, whereas the APT30GT60BRG is a switching transistor.
Are the APT30DQ60BG and APT30GT60BRG pin-compatible in the TO-247 package?
Both devices use the TO-247 package, but their pin functions differ. The APT30DQ60BG diode has two terminals (anode and cathode) plus a redundant cathode tab, while the APT30GT60BRG IGBT has three terminals (gate, collector, and emitter). They are not functionally interchangeable despite sharing the same package outline.
What is the maximum voltage rating for both the APT30DQ60BG and APT30GT60BRG?
Both the APT30DQ60BG diode and the APT30GT60BRG IGBT are rated for a maximum collector-to-emitter or reverse voltage of 600 V, making them suitable for 600 V-class power conversion designs.
What is the rated current for the APT30DQ60BG and APT30GT60BRG?
The APT30DQ60BG diode is rated for 30 A average forward current at a case temperature of 100 °C. The APT30GT60BRG IGBT is rated for 30 A continuous collector current at a case temperature of 100 °C.
Can the APT30DQ60BG be used as a freewheeling diode with the APT30GT60BRG IGBT?
Yes. The APT30DQ60BG is an ultrafast soft-recovery diode well suited for use as an antiparallel freewheeling diode across the APT30GT60BRG IGBT in inverter and motor drive applications, provided the reverse recovery and thermal requirements are validated for the target design.
What are the typical switching characteristics of the APT30GT60BRG IGBT?
The APT30GT60BRG is a Field Stop Trench IGBT offering low saturation voltage and fast switching. Designers should consult the official Microchip (Microsemi) datasheet for verified turn-on/turn-off delay, rise/fall times, and switching energy values before finalizing gate drive and thermal design.
What are the typical applications for the APT30DQ60BG and APT30GT60BRG?
The APT30DQ60BG ultrafast diode is commonly used in power factor correction, freewheeling, and rectification circuits. The APT30GT60BRG IGBT is commonly used in motor drives, inverters, welding equipment, and switch-mode power supplies. Both are 600 V-class devices suited to industrial power conversion.
Do the APT30DQ60BG and APT30GT60BRG share the same thermal and package characteristics?
Both devices are offered in the TO-247 package, but their internal thermal characteristics differ because one is a diode and the other is an IGBT. Junction-to-case thermal resistance and power dissipation ratings must be taken from each device's respective datasheet and are not interchangeable.