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IRF7104TRPBF
+BOMMOSFET 2P-CH 20V 2.3A 8-SOIC
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRF7104TRPBF
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Bảng dữ liệu IRF7104TRPBF DataSheet
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Gói SOIC-8
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Có sẵn22804
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 2.3A |
| RdsOn(Max)@IdVgs | 250mOhm @ 1A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 25nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 290pF @ 15V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Tổng quan
Description
Key specifications include a drain-source voltage (V_ds) of 20V and a continuous drain current (I_d) of 7.5A per channel. The device is encapsulated in a compact SO-8 surface-mount package, making it ideal for space-constrained applications while still maintaining excellent thermal performance.
This MOSFET is designed to enhance device performance with low power loss and high efficiency, supported by its low gate charge and low on-state resistance (R_ds(on)). Additionally, it comes in a lead-free and RoHS-compliant package, aligning with environmental standards. Overall, the IRF7104TRPBF is a versatile and efficient choice for modern electronic applications demanding compact power management solutions.
Equivalent
1. Fairchild FDS8958A
2. ON Semiconductor NTMFS4936N
3. Vishay Si4936DY
4. Alpha & Omega AO4806
These components should be verified for specific application compatibility, as parameters may vary slightly. Always consult datasheets for detailed specifications to ensure they meet your circuit requirements.
Features
1. Type: N-channel MOSFET.
2. Voltage Rating: It has a drain-source voltage (Vds) of 20V, making it suitable for low to medium voltage applications.
3. Current Rating: The device can handle a continuous drain current (Id) of up to 45A.
4. Rds(on): It features a low on-resistance, which helps to minimize power loss and improve efficiency.
5. Package: Available in a compact SO-8 package, facilitating easy surface mount technology (SMT) integration.
6. Thermal Performance: Designed to offer good thermal performance, it supports effective heat dissipation.
7. Applications: Commonly used in DC-DC converters, power management, and load switching applications.
8. Lead-Free: The device is RoHS compliant and lead-free, aligning with environmental and safety standards.
These features make the IRF7104TRPBF a versatile choice for various electronic applications requiring efficient power handling.
Pinout
Pin Count and Functions:
1. Drain1 (D1): Pin 1
2. Source1 (S1): Pin 2
3. Gate1 (G1): Pin 3
4. Source1 (S1): Pin 4
5. Source2 (S2): Pin 5
6. Gate2 (G2): Pin 6
7. Source2 (S2): Pin 7
8. Drain2 (D2): Pin 8
The IRF7104TRPBF has two MOSFETs within a single package, with each MOSFET having its own gate, source, and drain pins. This allows for dual-channel operation in a compact footprint, which is advantageous for space-constrained applications. The MOSFETs are used for switching purposes and can handle significant power levels efficiently.