Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 27A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 220mOhm @ 16A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 180 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 4660 pF @ 25 V |
| Power Dissipation (Max) | 500W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
Tổng quan
Description
The IRFP27N60KPBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high efficiency and reliability in various electronic applications. This particular model is part of the HEXFET® series from Infineon Technologies, known for its low on-state resistance and fast switching capabilities.
Key specifications include a drain-to-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 27A at 25°C. It features a low R_DS(on) value, which minimizes energy losses, making it suitable for use in power supply systems, motor controls, and other demanding environments. The TO-247AC package enhances thermal performance, allowing for effective heat dissipation.
The IRFP27N60KPBF is often used in industrial applications due to its robustness and ability to handle high voltages and currents. Its design ensures durability under stress, making it a reliable choice for engineers seeking to optimize power efficiency in high-performance circuits.
Key specifications include a drain-to-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 27A at 25°C. It features a low R_DS(on) value, which minimizes energy losses, making it suitable for use in power supply systems, motor controls, and other demanding environments. The TO-247AC package enhances thermal performance, allowing for effective heat dissipation.
The IRFP27N60KPBF is often used in industrial applications due to its robustness and ability to handle high voltages and currents. Its design ensures durability under stress, making it a reliable choice for engineers seeking to optimize power efficiency in high-performance circuits.
Equivalent
The IRFP27N60KPBF is a power MOSFET commonly used for high-efficiency switching applications. Equivalent or similar MOSFETs with comparable specifications could include:
1. IRFP24N60K
2. STP26NM60N
3. FDPF16N50T
4. FDPF33N25T
5. IXFH21N60P
When choosing a replacement, ensure that the voltage, current, and switching characteristics match your application requirements. Always consult the datasheets for precise specifications and compatibility.
1. IRFP24N60K
2. STP26NM60N
3. FDPF16N50T
4. FDPF33N25T
5. IXFH21N60P
When choosing a replacement, ensure that the voltage, current, and switching characteristics match your application requirements. Always consult the datasheets for precise specifications and compatibility.
Features
The IRFP27N60KPBF is a 600V N-channel MOSFET that is known for its high-performance capabilities. Key features include:
1. Voltage and Current Ratings: It supports a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 27A.
2. Low On-Resistance: The device has a low on-state resistance (R_DS(on)) of about 0.092 ohms, which improves efficiency by reducing power loss during operation.
3. High Speed: The MOSFET offers fast switching performance, which is ideal for applications requiring quick response times.
4. Rugged Design: It is designed to handle high energy pulses in demanding environments, contributing to its robustness and reliability.
5. Thermal Performance: The device features efficient thermal management with a maximum junction temperature of 150°C, ensuring stability in high-temperature applications.
6. Package: It comes in a TO-247AC package, which facilitates easy mounting and heat dissipation.
These features make the IRFP27N60KPBF suitable for use in power supply, motor control, and other high-voltage applications.
1. Voltage and Current Ratings: It supports a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 27A.
2. Low On-Resistance: The device has a low on-state resistance (R_DS(on)) of about 0.092 ohms, which improves efficiency by reducing power loss during operation.
3. High Speed: The MOSFET offers fast switching performance, which is ideal for applications requiring quick response times.
4. Rugged Design: It is designed to handle high energy pulses in demanding environments, contributing to its robustness and reliability.
5. Thermal Performance: The device features efficient thermal management with a maximum junction temperature of 150°C, ensuring stability in high-temperature applications.
6. Package: It comes in a TO-247AC package, which facilitates easy mounting and heat dissipation.
These features make the IRFP27N60KPBF suitable for use in power supply, motor control, and other high-voltage applications.
Pinout
The IRFP27N60KPBF is a power MOSFET designed for high-speed switching applications. It is typically used in power supply circuits, motor controllers, and other applications requiring high efficiency and reliability.
The device is housed in a TO-247 package, which is a standard three-pin configuration. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. When a voltage is applied to the gate, it allows current to flow between the drain and source.
2. Drain (D): The drain is where the main current flows into the MOSFET when it is in the "on" state.
3. Source (S): The source is where the current exits the MOSFET.
In summary, the IRFP27N60KPBF has three pins, each with a specific function critical for its operation as a switch in electronic circuits.
The device is housed in a TO-247 package, which is a standard three-pin configuration. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. When a voltage is applied to the gate, it allows current to flow between the drain and source.
2. Drain (D): The drain is where the main current flows into the MOSFET when it is in the "on" state.
3. Source (S): The source is where the current exits the MOSFET.
In summary, the IRFP27N60KPBF has three pins, each with a specific function critical for its operation as a switch in electronic circuits.
Manufacturer
The IRFP27N60KPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in a wide range of electronic components and systems. The company is known for producing semiconductors used in automotive systems, industrial applications, communication devices, and consumer electronics. Infineon's product portfolio includes power semiconductors, microcontrollers, sensors, and security solutions, among others. The company aims to address key technology challenges such as energy efficiency, mobility, and security.
Application
The IRFP27N60KPBF is a power MOSFET used in various applications requiring efficient power management and high-speed switching. Key application areas include:
1. Switching Power Supplies: Utilized in SMPS for its fast switching capabilities.
2. Motor Control: Employed in controlling motors due to its high current handling.
3. Inverters: Used in DC-AC inverters for applications like solar power systems.
4. UPS Systems: Helps in managing power conversion efficiently.
5. Audio Amplifiers: Deployed in high-power audio amplification systems.
6. Lighting: Used in electronic ballasts and LED drivers.
These applications benefit from the MOSFET's low on-resistance and high efficiency.
1. Switching Power Supplies: Utilized in SMPS for its fast switching capabilities.
2. Motor Control: Employed in controlling motors due to its high current handling.
3. Inverters: Used in DC-AC inverters for applications like solar power systems.
4. UPS Systems: Helps in managing power conversion efficiently.
5. Audio Amplifiers: Deployed in high-power audio amplification systems.
6. Lighting: Used in electronic ballasts and LED drivers.
These applications benefit from the MOSFET's low on-resistance and high efficiency.
Package
The IRFP27N60KPBF is a power MOSFET typically available in a TO-247 package type. This package is designed for high-power applications, providing efficient heat dissipation and ease of mounting on heat sinks.
