Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V, 8V |
| Current-ContinuousDrain(Id)@25°C | 630mA, 775mA |
| RdsOn(Max)@IdVgs | 375mOhm @ 630mA, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 3nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 46pF @ 20V |
| Power-Max | 270mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-TSSOP, SC-88, SOT-363 |
Tổng quan
Description
The NTJD4105CT1G is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by ON Semiconductor. It is commonly used in electronic circuits for switching and amplification purposes. This component is designed to handle lower power applications, making it ideal for portable and battery-powered devices.
Key Features:
- Dual N-Channel: Contains two N-channel MOSFETs in a single package, allowing for more compact circuit design.
- Low On-Resistance: Offers efficient conductivity when in an 'on' state, reducing power loss and heat generation.
- Compact Package: Typically housed in a small SOT-563 package, saving space on circuit boards.
- High-Speed Switching: Capable of fast switching speeds, suitable for high-frequency applications.
- Low Voltage Operation: Can operate efficiently at low voltages, making it suitable for modern low-power electronics.
Applications can include load switching, DC-DC converters, and analog switching. Its reliability and efficiency make it a versatile choice for engineers and designers in the electronics field.
Key Features:
- Dual N-Channel: Contains two N-channel MOSFETs in a single package, allowing for more compact circuit design.
- Low On-Resistance: Offers efficient conductivity when in an 'on' state, reducing power loss and heat generation.
- Compact Package: Typically housed in a small SOT-563 package, saving space on circuit boards.
- High-Speed Switching: Capable of fast switching speeds, suitable for high-frequency applications.
- Low Voltage Operation: Can operate efficiently at low voltages, making it suitable for modern low-power electronics.
Applications can include load switching, DC-DC converters, and analog switching. Its reliability and efficiency make it a versatile choice for engineers and designers in the electronics field.
Equivalent
The NTJD4105CT1G is a dual N-channel MOSFET. Equivalent products include:
1. FDMA1027PZ by ON Semiconductor: Similar specifications for low-voltage applications.
2. Si1022X by Vishay: Compatible in terms of function and package.
3. BSS138 by Nexperia: Though not dual, it’s often used in similar applications.
4. 2N7002 by Fairchild Semiconductor: Another commonly used N-channel MOSFET.
Always verify electrical characteristics to ensure compatibility for your specific application.
1. FDMA1027PZ by ON Semiconductor: Similar specifications for low-voltage applications.
2. Si1022X by Vishay: Compatible in terms of function and package.
3. BSS138 by Nexperia: Though not dual, it’s often used in similar applications.
4. 2N7002 by Fairchild Semiconductor: Another commonly used N-channel MOSFET.
Always verify electrical characteristics to ensure compatibility for your specific application.
Features
The NTJD4105CT1G is a dual N-channel MOSFET designed for efficient load switching and power management applications. Here are its key features:
1. Dual N-Channel MOSFET: Contains two N-channel MOSFETs in a single package, optimizing space and enhancing performance in compact designs.
2. Low On-Resistance: Exhibits low R_DS(on) values which reduce power dissipation and improve efficiency, crucial for battery-powered and heat-sensitive applications.
3. Compact Package: Available in a small SOT-563 package, making it suitable for space-constrained applications.
4. Fast Switching Speed: Capable of fast switching, which is essential for high-frequency applications and reducing transition losses.
5. Voltage Range: Supports a maximum drain-source voltage (V_DS) of 20V, suitable for various low-voltage applications.
6. Current Handling: Capable of handling a continuous drain current, making it suitable for moderate power loads.
These features make the NTJD4105CT1G ideal for use in consumer electronics, portable devices, and other applications where space, efficiency, and performance are critical.
1. Dual N-Channel MOSFET: Contains two N-channel MOSFETs in a single package, optimizing space and enhancing performance in compact designs.
2. Low On-Resistance: Exhibits low R_DS(on) values which reduce power dissipation and improve efficiency, crucial for battery-powered and heat-sensitive applications.
3. Compact Package: Available in a small SOT-563 package, making it suitable for space-constrained applications.
4. Fast Switching Speed: Capable of fast switching, which is essential for high-frequency applications and reducing transition losses.
5. Voltage Range: Supports a maximum drain-source voltage (V_DS) of 20V, suitable for various low-voltage applications.
6. Current Handling: Capable of handling a continuous drain current, making it suitable for moderate power loads.
These features make the NTJD4105CT1G ideal for use in consumer electronics, portable devices, and other applications where space, efficiency, and performance are critical.
Pinout
The NTJD4105CT1G is a dual N-channel MOSFET from ON Semiconductor. It comes in a compact SOT-563 package, which has a total of 6 pins. The primary function of this MOSFET is to serve as a switch or amplifier in electronic circuits.
Here is a brief description of its pin configuration:
1. Pin 1 (Gate 1) - Controls the first N-channel MOSFET.
2. Pin 2 (Source 1) - Source terminal for the first N-channel MOSFET.
3. Pin 3 (Drain 2) - Drain terminal for the second N-channel MOSFET.
4. Pin 4 (Gate 2) - Controls the second N-channel MOSFET.
5. Pin 5 (Source 2) - Source terminal for the second N-channel MOSFET.
6. Pin 6 (Drain 1) - Drain terminal for the first N-channel MOSFET.
This component is typically used in battery-powered applications, DC-DC converters, and load switching due to its small footprint and efficient operation.
Here is a brief description of its pin configuration:
1. Pin 1 (Gate 1) - Controls the first N-channel MOSFET.
2. Pin 2 (Source 1) - Source terminal for the first N-channel MOSFET.
3. Pin 3 (Drain 2) - Drain terminal for the second N-channel MOSFET.
4. Pin 4 (Gate 2) - Controls the second N-channel MOSFET.
5. Pin 5 (Source 2) - Source terminal for the second N-channel MOSFET.
6. Pin 6 (Drain 1) - Drain terminal for the first N-channel MOSFET.
This component is typically used in battery-powered applications, DC-DC converters, and load switching due to its small footprint and efficient operation.
Manufacturer
The NTJD4105CT1G is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is an American semiconductor supplier company. It specializes in providing a wide range of energy-efficient solutions, including power management, analog, sensors, logic, timing, connectivity, discrete, SoC, and custom devices. These products are used in various applications spanning automotive, communications, computing, consumer, industrial, medical, and aerospace/defense sectors. Onsemi aims to enable a greener, safer, and more connected world through innovative semiconductor solutions.
Application
The NTJD4105CT1G is a dual N-channel MOSFET commonly used in switching applications due to its low on-resistance and fast switching capabilities. It is typically used in power management, load switching, DC-DC converters, and battery management systems. Its compact SOT-563 package makes it suitable for space-constrained applications such as smartphones, tablets, and other portable electronic devices. Additionally, the device can be utilized in logic level conversion and as a low-side switch in various electronic circuits.
Package
The NTJD4105CT1G is a dual N-channel MOSFET. Its package type is SOT-563, which is a small, surface-mount package suitable for compact electronic designs.
