Hình ảnh chỉ để tham khảo
SI2307CDS-T1-GE3
+BOMMOSFET P-CH 30V 3.5A SOT23-3
-
Nhà sản xuấtSản phẩm Vishay Siliconix
-
Ông. Phần #SI2307CDS-T1-GE3
-
Bảng dữ liệu SI2307CDS-T1-GE3 DataSheet
-
Gói SOT-23-3
-
Có sẵn5053
365 Đảm bảo chất lượng ngày
7*24 giờ dịch vụ quarantee
90-Bảo hành sau bán hàng ngày
Bảo hành sản phẩm chính xác
Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 3.5A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 88mOhm @ 3.5A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 6.2 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 340 pF @ 15 V |
| Power Dissipation (Max) | 1.1W (Ta), 1.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Tổng quan
Description
- Voltage Rating: -20V (Drain-Source).
- Current Rating: -4.3A (Continuous Drain).
- Low On-Resistance: 45mΩ (max at VGS = -4.5V).
- Gate Threshold: -1V (typical), enabling compatibility with 3.3V/5V logic.
- Compact Package: SOT-23, ideal for space-constrained designs.
Common uses include power management, load switching, and battery protection in portable devices, DC-DC converters, and motor control circuits. Its low gate charge and fast switching enhance efficiency in high-frequency applications.
For detailed specs, refer to the datasheet.
Equivalent
- AO3401A (Vishay)
- DMG2305UX (Diodes Inc.)
- FDC6333C (Fairchild/ON Semi)
- IRLML6402 (Infineon)
These alternatives offer similar specs (P-channel, ~20V, 2-4A). Verify pinout and parameters for compatibility.
Features
- Voltage Rating: -30V (Drain-to-Source, VDS)
- Current Rating: -5.7A (Continuous Drain Current, ID)
- Low On-Resistance: 40mΩ (max) at VGS = -10V
- Gate Threshold Voltage: -1V to -2.5V (VGS(th))
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, battery protection
Designed for high efficiency and space-constrained designs.
Pinout
Pin Functions:
1. Gate (G): Controls the MOSFET's switching.
2. Source (S): Connected to the input voltage (for P-channel).
3. Drain (D): Output connection to the load.
Key Features:
- -20V drain-source voltage (VDS).
- -4.3A continuous drain current (ID).
- Low RDS(on) (e.g., ~50mΩ at VGS = -4.5V).
Commonly used for power switching, load control, and DC-DC conversion.
Manufacturer
Vishay is a publicly traded company (NYSE: VSH) known for producing a wide range of products, including MOSFETs, diodes, resistors, and capacitors. Founded in 1962, it serves industries like automotive, industrial, computing, and consumer electronics with high-performance components.
The SI2307CDS-T1-GE3 is a P-channel MOSFET, commonly used in power management applications. Vishay is recognized for its reliable, efficient semiconductor solutions.
Application
1. Power Management – Voltage regulation, load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in compact designs.
4. Consumer Electronics – Smartphones, tablets, and wearables for power control.
5. Automotive Systems – Low-voltage applications like infotainment and lighting.
Its small SOT-23 package and low on-resistance make it ideal for space-constrained, energy-efficient designs.
