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SI2319CDS-T1-GE3
+BOMMOSFET P-CH 40V 4.4A SOT23-3
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #SI2319CDS-T1-GE3
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Bảng dữ liệu SI2319CDS-T1-GE3 DataSheet
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Gói SOT-23-3
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Có sẵn4814
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 4.4A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 77mOhm @ 3.1A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 21 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 595 pF @ 20 V |
| Power Dissipation (Max) | 1.25W (Ta), 2.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Tổng quan
Description
"Introduction to SI2319CDS-T1-GE3" likely refers to a specific course code or module within an academic or training program. While specific details about this course aren't readily available, it's common for course codes to signify unique identifiers for classes within a curriculum. The components of the code could indicate:
- SI2319: A department or subject area, such as Science or Information Technology, followed by a course number.
- CDS: Possibly an abbreviation for a specific track or specialization, such as "Computer Data Science."
- T1: Could denote the term or level, such as "Term 1" or "Tier 1."
- GE3: Might indicate a general education requirement or a course level, like "General Education Level 3."
An introduction to such a course would typically cover foundational topics relevant to the subject area, aiming to provide students with a basic understanding and prepare them for more advanced studies. For precise information, consult the syllabus or academic advisor associated with the program offering this course.
- SI2319: A department or subject area, such as Science or Information Technology, followed by a course number.
- CDS: Possibly an abbreviation for a specific track or specialization, such as "Computer Data Science."
- T1: Could denote the term or level, such as "Term 1" or "Tier 1."
- GE3: Might indicate a general education requirement or a course level, like "General Education Level 3."
An introduction to such a course would typically cover foundational topics relevant to the subject area, aiming to provide students with a basic understanding and prepare them for more advanced studies. For precise information, consult the syllabus or academic advisor associated with the program offering this course.
Equivalent
The SI2319CDS-T1-GE3 is a P-channel MOSFET manufactured by Vishay. Equivalent products can include:
- NXP's PMV45EN
- ON Semiconductor's FDN5618P
- Infineon's BSS84
- Fairchild's FDN337N
These equivalents are chosen based on similar specifications, but always verify the datasheets to ensure compatibility with your specific application.
- NXP's PMV45EN
- ON Semiconductor's FDN5618P
- Infineon's BSS84
- Fairchild's FDN337N
These equivalents are chosen based on similar specifications, but always verify the datasheets to ensure compatibility with your specific application.
Features
The SI2319CDS-T1-GE3 is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. Here are its key features:
1. N-Channel MOSFET: It's an N-channel type, meaning it uses electrons as charge carriers.
2. Low On-Resistance: It offers a low on-resistance (R_DS(on)), typically enhancing efficiency by reducing power loss.
3. Fast Switching Speed: This component is designed for rapid switching, making it suitable for high-frequency applications.
4. Package Type: The device typically comes in a compact SOT-23 package, which is suitable for space-constrained applications.
5. Drain-Source Voltage: It can handle a maximum drain-source voltage, typically around 20V.
6. Continuous Drain Current: Supports a continuous drain current, usually up to a certain limit around 3A.
7. Applications: Ideal for use in load switch applications, portable devices, and DC-DC converters.
8. Operating Temperature Range: It has an operating temperature range suitable for most consumer and industrial applications.
These features make the SI2319CDS-T1-GE3 suitable for efficient and compact electronic design.
1. N-Channel MOSFET: It's an N-channel type, meaning it uses electrons as charge carriers.
2. Low On-Resistance: It offers a low on-resistance (R_DS(on)), typically enhancing efficiency by reducing power loss.
3. Fast Switching Speed: This component is designed for rapid switching, making it suitable for high-frequency applications.
4. Package Type: The device typically comes in a compact SOT-23 package, which is suitable for space-constrained applications.
5. Drain-Source Voltage: It can handle a maximum drain-source voltage, typically around 20V.
6. Continuous Drain Current: Supports a continuous drain current, usually up to a certain limit around 3A.
7. Applications: Ideal for use in load switch applications, portable devices, and DC-DC converters.
8. Operating Temperature Range: It has an operating temperature range suitable for most consumer and industrial applications.
These features make the SI2319CDS-T1-GE3 suitable for efficient and compact electronic design.
Pinout
The SI2319CDS-T1-GE3 is an N-channel MOSFET manufactured by Vishay Siliconix. It comes in a compact SOT-23 package, which typically has 3 pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and the source.
2. Source (S): This is the terminal where the current enters the MOSFET. For N-channel MOSFETs, the source is usually connected to a lower voltage compared to the drain.
3. Drain (D): This is the terminal where the current exits the MOSFET. It is typically connected to the load.
The SI2319CDS-T1-GE3 is designed for low-voltage switching applications and is characterized by low on-resistance and fast switching speed, making it suitable for efficient power management in compact electronic circuits.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and the source.
2. Source (S): This is the terminal where the current enters the MOSFET. For N-channel MOSFETs, the source is usually connected to a lower voltage compared to the drain.
3. Drain (D): This is the terminal where the current exits the MOSFET. It is typically connected to the load.
The SI2319CDS-T1-GE3 is designed for low-voltage switching applications and is characterized by low on-resistance and fast switching speed, making it suitable for efficient power management in compact electronic circuits.
Manufacturer
The SI2319CDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a prominent global company that specializes in designing, manufacturing, and supplying a broad range of discrete semiconductors and passive electronic components. Founded in 1962, Vishay is known for its vast product portfolio that includes resistors, capacitors, inductors, diodes, MOSFETs, and optoelectronic components, among others. These components are integral to numerous applications across various industries, including automotive, industrial, consumer electronics, telecommunications, and computing.
Vishay's commitment to innovation and quality has positioned it as a leader in the electronics components sector. The company operates worldwide, with numerous manufacturing facilities and sales offices that enable it to serve a diverse, global customer base. Vishay's components are crucial in enabling the functionality, efficiency, and reliability of electronic devices and systems. The company's focus on research and development, along with its strategic acquisitions over the years, has expanded its technological capabilities and market reach, reinforcing its status as a key player in the electronics industry.
Vishay's commitment to innovation and quality has positioned it as a leader in the electronics components sector. The company operates worldwide, with numerous manufacturing facilities and sales offices that enable it to serve a diverse, global customer base. Vishay's components are crucial in enabling the functionality, efficiency, and reliability of electronic devices and systems. The company's focus on research and development, along with its strategic acquisitions over the years, has expanded its technological capabilities and market reach, reinforcing its status as a key player in the electronics industry.
Application
The SI2319CDS-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various electronic applications. Its primary areas of use include power management, load switching, and amplification in consumer electronics, telecommunications, and computing devices. This component is often utilized in DC-DC converters, battery management systems, and power supply circuits due to its high efficiency and compact size. Its low on-resistance and fast switching capabilities also make it suitable for use in motor control circuits and LED lighting systems.
Package
The SI2319CDS-T1-GE3 is a MOSFET device typically packaged in a standard SOT-23 configuration, which is a small, surface-mount package commonly used for transistors and other semiconductor devices.
