SI7322DN-T1-GE3

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SI7322DN-T1-GE3

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MOSFET N-CH 100V 18A PPAK1212-8

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Thông số kỹ thuật

thuộc tính Giá trị
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 18A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 58mOhm @ 5.5A, 10V
Vgs(th)(Max) @ Id 4.4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 20 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 750 pF @ 50 V
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8

Tổng quan

Description

The SI7322DN-T1-GE3 is a N-channel MOSFET from Vishay, designed for high-efficiency power management in applications like DC-DC converters, load switches, and motor control.
Key Features:
- Voltage Rating: 30V
- Current Rating: 60A (pulsed)
- Low On-Resistance (RDS(on)): 2.2mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-frequency operation
- Package: PowerPAK® SO-8 (compact, thermally efficient)
Applications:
- Power supplies
- Battery management
- Automotive systems
This MOSFET offers low conduction losses, high current handling, and robust thermal performance, making it suitable for space-constrained, high-power designs.

Features

The SI7322DN-T1-GE3 is a 30V P-channel MOSFET with the following key features:
- Voltage Rating: 30V (Drain-Source)
- Current Rating: 12.5A (Continuous Drain Current)
- Low On-Resistance: 9.3mΩ (max @ VGS = -10V)
- Gate Threshold Voltage: -1V (typical)
- Fast Switching: Low gate charge (22nC) and low capacitance for efficient performance
- Power Dissipation: 3.1W (max)
- Package: PowerPAK® SO-8 (compact, thermally enhanced)
- Applications: Power management, load switching, DC-DC conversion
Designed for high efficiency in space-constrained designs, it’s ideal for battery protection, motor control, and portable electronics.

Package

The SI7322DN-T1-GE3 is a PowerPAK® SO-8 dual N-channel MOSFET package. It features a compact, surface-mount design with improved thermal performance and power dissipation. The package is lead-free and RoHS-compliant, suitable for high-efficiency power applications.

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