Hình ảnh chỉ để tham khảo
SI7898DP-T1-GE3
+BOMMOSFET N-CH 150V 3A PPAK SO-8
-
Nhà sản xuấtSản phẩm Vishay Siliconix
-
Ông. Phần #SI7898DP-T1-GE3
-
Bảng dữ liệu SI7898DP-T1-GE3 DataSheet
-
Gói PowerPAK-SO-8
-
Có sẵn6609
365 Đảm bảo chất lượng ngày
7*24 giờ dịch vụ quarantee
90-Bảo hành sau bán hàng ngày
Bảo hành sản phẩm chính xác
Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 3A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 85mOhm @ 3.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 21 nC @ 10 V |
| Vgs(Max) | ±20V |
| Power Dissipation (Max) | 1.9W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
Tổng quan
Description
The SI7898DP-T1-GE3 is designed to handle significant power loads while minimizing energy loss, contributing to overall energy efficiency. It is built using advanced semiconductor technology to ensure reliability and performance under stress. The component is often used in consumer electronics, industrial systems, and computing equipment requiring robust power management solutions. It complies with environmental and safety standards, including RoHS, which restricts the use of certain hazardous substances. Its design and specifications make it a versatile choice for engineers looking to optimize power efficiency in their electronic designs.
Equivalent
1. IRF530N by Infineon Technologies
2. STP55NF06 by STMicroelectronics
3. FQP30N06L by ON Semiconductor
Always check the datasheets to ensure compatibility in terms of electrical characteristics and package dimensions.
Features
Key features include:
- Low on-resistance for efficient power management.
- P-channel configuration.
- Compact PowerPAK SO-8 package for better thermal performance.
- Suitable for applications requiring efficient load switching.
These features make it an excellent choice for designers looking to optimize space and power efficiency in their electronic designs.
Pinout
The key features of the SI7898DP-T1-GE3 include low on-resistance, high current handling capability, and fast switching speeds. It is commonly used for its efficiency in switching applications, which helps in reducing power losses and improving overall performance in electronic circuits.
In terms of pin functions, typical assignments for PowerPAK SO-8 packages include:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): Connects to the load and is the output path for current.
3. Source (S): Connects to the ground or return path for current.
For the exact pin assignment, it's important to refer to the manufacturer's datasheet, as specific configurations can vary by device and application.