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SIHG30N60E-GE3
+BOMMOSFET N-CH 600V 29A TO247AC
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #SIHG30N60E-GE3
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Bảng dữ liệu SIHG30N60E-GE3 DataSheet
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Gói TO-247-3
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Có sẵn3601
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 29A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 125mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 130 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 2600 pF @ 100 V |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
Tổng quan
Description
The SIHG30N60E-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Vishay Siliconix. It is part of their TrenchFET series, known for their high efficiency and low on-resistance. This specific model is capable of handling a maximum drain-source voltage of 600V and a continuous drain current of 30A. It is housed in a TO-247 package, which provides effective heat dissipation, making it suitable for high-power applications.
Key features of the SIHG30N60E-GE3 include low gate charge, fast switching speeds, and a robust construction that ensures reliability in demanding environments. It is commonly used in power supplies, motor control circuits, and various applications requiring efficient energy conversion. The device's design also contributes to reduced energy loss and improved thermal performance, making it an ideal choice for applications aiming for energy efficiency.
Key features of the SIHG30N60E-GE3 include low gate charge, fast switching speeds, and a robust construction that ensures reliability in demanding environments. It is commonly used in power supplies, motor control circuits, and various applications requiring efficient energy conversion. The device's design also contributes to reduced energy loss and improved thermal performance, making it an ideal choice for applications aiming for energy efficiency.
Equivalent
The SIHG30N60E-GE3 is a 600V, 30A N-channel MOSFET. To find equivalent products, look for MOSFETs with similar voltage, current ratings, and package. Possible equivalents include:
1. STMicroelectronics STW30N60DM2
2. Infineon IPW60R030P7
3. ON Semiconductor FDPF30N60
Always verify the datasheets for exact specs and characteristics to ensure full compatibility with your application.
1. STMicroelectronics STW30N60DM2
2. Infineon IPW60R030P7
3. ON Semiconductor FDPF30N60
Always verify the datasheets for exact specs and characteristics to ensure full compatibility with your application.
Features
The SIHG30N60E-GE3 is a silicon N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Vishay Siliconix. Key features include:
1. Voltage Rating: It has a drain-source voltage (V_ds) rating of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_d) is rated at 30A, allowing it to handle substantial current loads.
3. R_ds(on): It features a low on-resistance, which helps reduce power loss and improve efficiency.
4. Package Type: Typically available in TO-247 or similar packages, which provide good thermal performance and ease of mounting.
5. Applications: Ideal for use in power supplies, motor control, and other power management systems.
6. Technology: Utilizes advanced MOSFET technology for enhanced performance, including fast switching capabilities.
7. Thermal Performance: Designed for efficient heat dissipation to maintain performance under high-power conditions.
These features make the SIHG30N60E-GE3 suitable for various industrial and commercial applications requiring efficient power management.
1. Voltage Rating: It has a drain-source voltage (V_ds) rating of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_d) is rated at 30A, allowing it to handle substantial current loads.
3. R_ds(on): It features a low on-resistance, which helps reduce power loss and improve efficiency.
4. Package Type: Typically available in TO-247 or similar packages, which provide good thermal performance and ease of mounting.
5. Applications: Ideal for use in power supplies, motor control, and other power management systems.
6. Technology: Utilizes advanced MOSFET technology for enhanced performance, including fast switching capabilities.
7. Thermal Performance: Designed for efficient heat dissipation to maintain performance under high-power conditions.
These features make the SIHG30N60E-GE3 suitable for various industrial and commercial applications requiring efficient power management.
Pinout
The SIHG30N60E-GE3 is a power MOSFET manufactured by Vishay Siliconix. It is designed for high-efficiency power conversion applications. The device is housed in a TO-247 package, which typically consists of three pins:
1. Gate (G): This pin is used to control the MOSFET's operation by applying a voltage that turns the device on or off.
2. Drain (D): This pin is connected to the main current-carrying path of the MOSFET. It is where the load current flows when the device is in the "on" state.
3. Source (S): This pin serves as the return path for the load current. It is usually connected to the ground or a reference voltage level in the circuit.
The SIHG30N60E-GE3 is designed for high-voltage applications with a voltage rating of 600 V and is suitable for use in switching power supplies, motor control, and other power management systems. It is important to consult the specific datasheet for detailed specifications and application guidelines.
1. Gate (G): This pin is used to control the MOSFET's operation by applying a voltage that turns the device on or off.
2. Drain (D): This pin is connected to the main current-carrying path of the MOSFET. It is where the load current flows when the device is in the "on" state.
3. Source (S): This pin serves as the return path for the load current. It is usually connected to the ground or a reference voltage level in the circuit.
The SIHG30N60E-GE3 is designed for high-voltage applications with a voltage rating of 600 V and is suitable for use in switching power supplies, motor control, and other power management systems. It is important to consult the specific datasheet for detailed specifications and application guidelines.
Manufacturer
The SIHG30N60E-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of products, including diodes, MOSFETs, resistors, inductors, and capacitors, which are used in various industries like automotive, industrial, computing, consumer electronics, telecommunications, and medical sectors. Vishay is known for its commitment to innovation, quality, and reliability, playing a significant role in the electronics supply chain by providing essential components that support the functionality and performance of electronic devices.
Application
The SIHG30N60E-GE3 is a power MOSFET commonly used in various applications due to its high efficiency and reliability. Key application areas include:
1. Switching Power Supplies: Ideal for use in power conversion systems due to its fast switching capabilities and low on-resistance.
2. Motor Drives: Suitable for controlling and driving motors in industrial and consumer applications.
3. Inverters: Used in solar inverters and uninterruptible power supplies (UPS) for efficient energy conversion.
4. Lighting Systems: Employed in LED lighting systems for power regulation.
5. Automotive Systems: Used in electric and hybrid vehicle power systems for efficient energy management.
1. Switching Power Supplies: Ideal for use in power conversion systems due to its fast switching capabilities and low on-resistance.
2. Motor Drives: Suitable for controlling and driving motors in industrial and consumer applications.
3. Inverters: Used in solar inverters and uninterruptible power supplies (UPS) for efficient energy conversion.
4. Lighting Systems: Employed in LED lighting systems for power regulation.
5. Automotive Systems: Used in electric and hybrid vehicle power systems for efficient energy management.
Package
The SIHG30N60E-GE3 is a discrete power MOSFET packaged in a TO-247 package. The TO-247 is a through-hole package commonly used for high-power semiconductor devices, providing efficient thermal management and electrical performance.
