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SIS407DN-T1-GE3
+BOMMOSFET P-CH 20V 25A PPAK1212-8
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #SIS407DN-T1-GE3
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Bảng dữ liệu SIS407DN-T1-GE3 DataSheet
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Gói PowerPAK®1212-8
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 25A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 9.5mOhm @ 15.3A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 93.8 nC @ 8 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 2760 pF @ 10 V |
| Power Dissipation (Max) | 3.6W (Ta), 33W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
Tổng quan
Description
- SIS: This could refer to a manufacturer's series name or an acronym for a specific technology or product category.
- 407DN: Likely denotes the model number, indicating specific features or capabilities.
- T1: Could refer to a version or type within the 407DN series, possibly indicating a particular configuration or functionality.
- GE3: Might signify a geographical edition, energy efficiency rating, or another unique characteristic.
To gain a comprehensive understanding of the SIS407DN-T1-GE3, it is advisable to consult the manufacturer's documentation or website for product specifications, operational guidelines, and intended applications. This information will provide insights into its technical details, uses, and compatibility with other systems.
Equivalent
Features
1. Measurement Range: It offers a wide temperature range, capable of measuring temperatures from -40°C to 1200°C, making it suitable for various industrial applications.
2. Accuracy and Precision: Known for high accuracy, it typically has an accuracy of ±1% or ±1°C, ensuring reliable measurements.
3. Optical Resolution: Equipped with a high optical resolution, often expressed as D:S (Distance to Spot) ratio, which allows for precise targeting from a distance.
4. Response Time: It has a fast response time, usually in milliseconds, enabling real-time monitoring of temperature changes.
5. Emissivity Adjustment: The device includes adjustable emissivity settings to cater to different material surfaces, enhancing measurement versatility.
6. Durability: Built to withstand harsh environments, it often features a robust design with IP-rated protection against dust and moisture.
7. Display and Interface: Typically, it includes an easy-to-read digital display and may offer connectivity options for data logging and analysis.
These features make the SIS407DN-T1-GE3 ideal for applications in manufacturing, maintenance, and other industrial fields requiring precise temperature monitoring.
Pinout
Here is a brief overview of its key functions and pin assignments:
1. Pin Count: The SIS407DN-T1-GE3 has 8 pins.
2. Pin Functions:
- Drain (D): The device typically has multiple pins connected to the drain for better current handling and heat dissipation. In a PowerPAK SO-8, multiple pins (usually 4) are often allocated for the drain.
- Source (S): The source is connected to one or more pins, providing the path for the current to exit the transistor.
- Gate (G): The gate is usually connected to one pin and is used to control the MOSFET's operation.
3. General Function: This MOSFET is utilized for switching and amplification in electronic circuits like power management, load switching, and DC-DC converters due to its low on-resistance and efficient power handling capabilities.