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SIS434DN-T1-GE3
+BOMMOSFET N-CH 40V 35A PPAK 1212-8
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #SIS434DN-T1-GE3
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Bảng dữ liệu SIS434DN-T1-GE3 DataSheet
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Gói PowerPAK-1212
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Có sẵn6308
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 35A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 7.6mOhm @ 16.2A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 40 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1530 pF @ 20 V |
| Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
Tổng quan
Description
The SIS434DN-T1-GE3 is likely a model number for a specific component or device, possibly within the field of electronics or telecommunications. While detailed information on this specific model isn't readily available, understanding its context typically involves examining its application, such as in network systems, signal processing, or digital communications. Components like this can be used in various systems, such as data transmission networks, embedded systems, or industrial automation controls.
To fully comprehend its usage and capabilities, one would typically refer to its datasheet or technical manual provided by the manufacturer. These documents often include specifications, features, application guidelines, and safety precautions. If you're working with this component, ensure compatibility with your system requirements and consider consulting technical support or engineering resources for specific integration advice. For further information, identify the manufacturer or product line to access more detailed documentation or user communities that might offer insights or shared experiences related to the SIS434DN-T1-GE3.
To fully comprehend its usage and capabilities, one would typically refer to its datasheet or technical manual provided by the manufacturer. These documents often include specifications, features, application guidelines, and safety precautions. If you're working with this component, ensure compatibility with your system requirements and consider consulting technical support or engineering resources for specific integration advice. For further information, identify the manufacturer or product line to access more detailed documentation or user communities that might offer insights or shared experiences related to the SIS434DN-T1-GE3.
Equivalent
The SIS434DN-T1-GE3 is a dual N-channel MOSFET. Equivalent products may include the NXP PMPB35ENEA, Infineon BSC026N02LS, and ON Semiconductor NTMFS4935N. Always verify electrical specifications and pin compatibility before selecting a substitute.
Features
The SIS434DN-T1-GE3 is a N-channel MOSFET transistor designed for power management applications. Key features include:
1. Low On-Resistance: Offers low on-resistance, enhancing efficiency and reducing power loss in circuits.
2. High Voltage Handling: Typically supports high voltage operation, suitable for various power electronics applications.
3. Fast Switching Speed: Provides rapid switching capabilities, beneficial for high-frequency applications.
4. Thermal Performance: Designed for good thermal efficiency, ensuring reliable performance under various conditions.
5. Compact Package: Comes in a small package, making it ideal for space-constrained designs.
6. Logic Level Gate Drive: Compatible with logic level signals, making it easy to integrate with microcontrollers and other digital circuits.
7. Avalanche Rated: Includes avalanche energy rating for enhanced durability and robustness.
These features make the SIS434DN-T1-GE3 a versatile component for applications requiring efficient power management, such as DC-DC converters, motor drives, and other switching applications.
1. Low On-Resistance: Offers low on-resistance, enhancing efficiency and reducing power loss in circuits.
2. High Voltage Handling: Typically supports high voltage operation, suitable for various power electronics applications.
3. Fast Switching Speed: Provides rapid switching capabilities, beneficial for high-frequency applications.
4. Thermal Performance: Designed for good thermal efficiency, ensuring reliable performance under various conditions.
5. Compact Package: Comes in a small package, making it ideal for space-constrained designs.
6. Logic Level Gate Drive: Compatible with logic level signals, making it easy to integrate with microcontrollers and other digital circuits.
7. Avalanche Rated: Includes avalanche energy rating for enhanced durability and robustness.
These features make the SIS434DN-T1-GE3 a versatile component for applications requiring efficient power management, such as DC-DC converters, motor drives, and other switching applications.
Pinout
The SIS434DN-T1-GE3 is a power MOSFET manufactured by Vishay Siliconix. It typically comes in a PowerPAK® SO-8 package. The device features a dual N-channel MOSFET designed for use in load switching applications, power management in portable and battery-powered devices, and DC-DC conversion.
The PowerPAK® SO-8 package usually has a pin count of 8. The pin configuration includes:
1. Gate 1: Controls the first MOSFET.
2. Source 1: Source terminal of the first MOSFET.
3. Drain 1: Drain terminal of the first MOSFET.
4. Gate 2: Controls the second MOSFET.
5. Source 2: Source terminal of the second MOSFET.
6. Drain 2: Drain terminal of the second MOSFET.
7. Common Drain: A large pad for heat dissipation, typically electrically connected to the drain terminals.
These devices are known for their low on-resistance and optimized gate charge characteristics, making them efficient for high-speed switching applications. For precise specifications, please refer to the datasheet provided by the manufacturer.
The PowerPAK® SO-8 package usually has a pin count of 8. The pin configuration includes:
1. Gate 1: Controls the first MOSFET.
2. Source 1: Source terminal of the first MOSFET.
3. Drain 1: Drain terminal of the first MOSFET.
4. Gate 2: Controls the second MOSFET.
5. Source 2: Source terminal of the second MOSFET.
6. Drain 2: Drain terminal of the second MOSFET.
7. Common Drain: A large pad for heat dissipation, typically electrically connected to the drain terminals.
These devices are known for their low on-resistance and optimized gate charge characteristics, making them efficient for high-speed switching applications. For precise specifications, please refer to the datasheet provided by the manufacturer.
Manufacturer
The manufacturer of the SIS434DN-T1-GE3 is Vishay Siliconix. Vishay Siliconix is a subsidiary of Vishay Intertechnology, which is a global manufacturer of discrete semiconductors and passive electronic components. Vishay Intertechnology operates in various segments, including automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. The company is known for producing a wide range of products, such as MOSFETs, ICs, diodes, optoelectronics, resistors, capacitors, and inductors. Vishay’s components are integral in power management, signal processing, and energy storage applications, making the company a significant player in the electronic components industry.
Application
The SIS434DN-T1-GE3 is a dual N-channel MOSFET used in various applications due to its efficient power management capabilities. It is commonly used in DC-DC converters, power management systems, and load switches. These components are essential in consumer electronics, computing, and telecommunications to ensure efficient power distribution and management. Additionally, the MOSFET's low on-resistance and fast switching capabilities make it suitable for use in motor control circuits and high-frequency switching applications. Overall, the SIS434DN-T1-GE3 is valued for its high efficiency and reliability in power-sensitive applications.
Package
The SIS434DN-T1-GE3 is a MOSFET device from Vishay Siliconix. The package type for this component is an SO-8, which is a small outline package with eight pins.
