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SUD25N15-52-E3
+BOMMOSFET N-CH 150V 25A TO252
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #SUD25N15-52-E3
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 25A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 52mOhm @ 5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 40 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1725 pF @ 25 V |
| Power Dissipation (Max) | 3W (Ta), 136W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Tổng quan
Description
- Likely purpose: high-voltage, high-current switching (e.g., DC-DC converters, motor drivers, power supplies, inverters).
- Typical hints from the code: around 150 V rating and ~25 A capability, with an E3 package variant; exact specs depend on the manufacturer.
- How to use: driven by a suitable gate driver; include protection (gate resistor, TVS/Zener, flyback diode for inductive loads) and proper heatsinking.
- Key specs to verify in the datasheet: Vds, Id, Rds(on), gate threshold, total gate charge, packaging/pinout, and thermal characteristics.
- Where to get reliable info: the manufacturer’s datasheet or distributor page for the exact variant.
If you can share the manufacturer or provide a link, I can pull the precise specifications or give a more exact introduction.
Equivalent
Features
- N-channel enhancement-mode power MOSFET
- Blocking voltage: ~150 V
- Continuous drain current: ~25 A
- Low on-resistance (Rds(on)) for reduced conduction losses
- Gate drive: threshold ~2–4 V; lowest Rds(on at higher Vgs, typically 10 V)
- Fast switching suitable for SMPS and motor drives
- Integrated body diode with robust reverse conduction
- Avalanche ruggedness for fault tolerance
- Thermally enhanced package (E3); good for heatsinking
- Package type: E3 (power package, common for D2PAK/DPAK-like footprints)
Note: exact Rds(on), Id, switching times, and thermal characteristics depend on the specific lot and datasheet. For precise specs, please consult the official datasheet.
Pinout
Function: N-channel enhancement-mode power MOSFET (about 25 A, ~150 V rating) used as a high-power switch. The drain is tied to the tab.
Manufacturer
What kind of company: A Japanese company that designs and manufactures power semiconductors (IGBTs, diodes, transistors) and related power-electronics components for industrial, automotive, and consumer applications.
Application
- Offline/telecom switch-mode power supplies and AC-DC adapters
- High-efficiency DC-DC converters (buck/boost/buck-boost) and synchronous rectification
- Motor control drives (BLDC/PMSM, stepper)
- Automotive power electronics (inverters, DC-DC, battery charging)
- Renewable-energy inverters (solar, small wind), UPS and energy-storage systems
- Industrial power supplies and welding equipment
Note: refer to the datasheet for exact ratings and suitable topologies.